LUIS RINCON (EES) SECCION 2
CI:18257927
LDMOS
Freescale gets serious in RF; launches new LDMOS and enters GaAs MMICs
Freescale Semiconductor has rolled out new RF LDMOS power transistor designed for operation from 1.8 to 600 MHz and optimized for use under the potentially-destructive impedance mismatch conditions encountered in applications such as CO2 lasers, plasma generators, and magnetic resonance imaging (MRI) scanners. Freescale says the new MRFE6VP6300H FET is the world's first 50 V LDMOS transistor to deliver full-rated output power of 300 Watts CW into a load with a Voltage Standing Wave Ratio (VSWR) of 65:1 and is the only 50 V LDMOS transistor commercially offered with this level of performance.
"This outstanding technical achievement underscores Freescale's long track record of industry firsts in the RF power market," said Gavin Woods, vice president and general manager of Freescale's RF Division. "With this new transistor, manufacturers of CO2 lasers, plasma generators, MRI scanners and other industrial equipment can leverage unprecedented levels of ruggedness and RF power performance."
The other key features of MRFE6VP6300H includes:
MRFE6VP6300H can be used in a push-pull or single-ended configuration
MRFE6VP6300H feature innovative electrostatic discharge (ESD) protection
Package: compact air cavity ceramic NI780-4 package
Availability: Now in samples and volumes in 4th quarter of 2010
In a another separate release Freescale Semiconductor has announced that it has entered the gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) marketplace with the introduction of four new devices to work as low-noise amplifiers and transmit power amplifiers in macro base stations, repeaters and femtocells employed in wireless networks.
Freescale says it holds numerous GaAs-related patents, and was one of the first companies to develop devices based on GaAs technology. The company's growing family of general-purpose amplifiers (GPAs) based on InGaP heterojunction bipolar transistors (HBTs) and GaAs heterojunction field effect transistors (HFETs) covers a broad array of RF and microwave applications.
"Freescale's high performance MMIC devices offer comprehensive RF active solutions for applications requiring high performance such as 3G and 4G cellular base stations, repeaters and femtocells," said Gavin P. Woods, vice president and general manager of Freescale's RF Division. "We developed the new MMIC products with the same standards as our advanced LDMOS RF technology in terms of quality and reliability. Our GaAs MMICs also come with the software and hardware tools necessary to extract optimal performance with minimal overhead costs."
The four new MMICs are:
MML09211H: An enhancement-mode pHEMT MMIC low-noise amplifier for applications such as W-CDMA base stations in the 865 - 960 MHz band to the high-datarate networks currently being implemented in the 728 - 768 MHz band. Key features are low noise figure of 0.6 dB including circuit losses, and supports operation from 400 to 1400 MHz. Small-signal gain is 20 dB at 900 MHz, P1dB output power is 21 dBm, isolation is - 35 dB, and third order output intercept point (IP3) is 32 dBm at 900 MHz.
MMA20312B: Is a two-stage InGaP HBT power amplifier designed for use in wireless base stations as well as repeaters and femtocells. The amplifier covers 1800 to 2200 MHz, delivers P1dB output power of 31 dBm at 2140 MHz and small-signal gain of 26 dB.
MMG15241H: Is a pHEMT device that covers 500 to 2800 MHz, with a noise figure of 1.6 dB at 2140 MHz, P1dB output power of 24 dBm, IP3 of 39 dBm, and small-signal gain of 15 dB.
MMG20271H: Is a low-noise amplifier covers 1500 to 2400 MHz, with a noise figure of 1.8 dB at 2140 MHz, P1dB output power of 27 dBm, IP3 of 42 dBm, and small-signal gain of 15 dB.
Availability: Limited sampling by June 2010 and general sampling by August 2010.
To know more visit www.freescale.com
Freescale Semiconductor has rolled out new RF LDMOS power transistor designed for operation from 1.8 to 600 MHz and optimized for use under the potentially-destructive impedance mismatch conditions encountered in applications such as CO2 lasers, plasma generators, and magnetic resonance imaging (MRI) scanners. Freescale says the new MRFE6VP6300H FET is the world's first 50 V LDMOS transistor to deliver full-rated output power of 300 Watts CW into a load with a Voltage Standing Wave Ratio (VSWR) of 65:1 and is the only 50 V LDMOS transistor commercially offered with this level of performance.
"This outstanding technical achievement underscores Freescale's long track record of industry firsts in the RF power market," said Gavin Woods, vice president and general manager of Freescale's RF Division. "With this new transistor, manufacturers of CO2 lasers, plasma generators, MRI scanners and other industrial equipment can leverage unprecedented levels of ruggedness and RF power performance."
The other key features of MRFE6VP6300H includes:
MRFE6VP6300H can be used in a push-pull or single-ended configuration
MRFE6VP6300H feature innovative electrostatic discharge (ESD) protection
Package: compact air cavity ceramic NI780-4 package
Availability: Now in samples and volumes in 4th quarter of 2010
In a another separate release Freescale Semiconductor has announced that it has entered the gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) marketplace with the introduction of four new devices to work as low-noise amplifiers and transmit power amplifiers in macro base stations, repeaters and femtocells employed in wireless networks.
Freescale says it holds numerous GaAs-related patents, and was one of the first companies to develop devices based on GaAs technology. The company's growing family of general-purpose amplifiers (GPAs) based on InGaP heterojunction bipolar transistors (HBTs) and GaAs heterojunction field effect transistors (HFETs) covers a broad array of RF and microwave applications.
"Freescale's high performance MMIC devices offer comprehensive RF active solutions for applications requiring high performance such as 3G and 4G cellular base stations, repeaters and femtocells," said Gavin P. Woods, vice president and general manager of Freescale's RF Division. "We developed the new MMIC products with the same standards as our advanced LDMOS RF technology in terms of quality and reliability. Our GaAs MMICs also come with the software and hardware tools necessary to extract optimal performance with minimal overhead costs."
The four new MMICs are:
MML09211H: An enhancement-mode pHEMT MMIC low-noise amplifier for applications such as W-CDMA base stations in the 865 - 960 MHz band to the high-datarate networks currently being implemented in the 728 - 768 MHz band. Key features are low noise figure of 0.6 dB including circuit losses, and supports operation from 400 to 1400 MHz. Small-signal gain is 20 dB at 900 MHz, P1dB output power is 21 dBm, isolation is - 35 dB, and third order output intercept point (IP3) is 32 dBm at 900 MHz.
MMA20312B: Is a two-stage InGaP HBT power amplifier designed for use in wireless base stations as well as repeaters and femtocells. The amplifier covers 1800 to 2200 MHz, delivers P1dB output power of 31 dBm at 2140 MHz and small-signal gain of 26 dB.
MMG15241H: Is a pHEMT device that covers 500 to 2800 MHz, with a noise figure of 1.6 dB at 2140 MHz, P1dB output power of 24 dBm, IP3 of 39 dBm, and small-signal gain of 15 dB.
MMG20271H: Is a low-noise amplifier covers 1500 to 2400 MHz, with a noise figure of 1.8 dB at 2140 MHz, P1dB output power of 27 dBm, IP3 of 42 dBm, and small-signal gain of 15 dB.
Availability: Limited sampling by June 2010 and general sampling by August 2010.
To know more visit www.freescale.com
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